E13009L MJE13009L E13009 13009L KSE13009L TO-3P NPN High Power Transistor

E13009L MJE13009L E13009 13009L KSE13009L TO-3P NPN High Power Transistor

Referensi P213-L2A13

Stok 196

Rp. 10.000
Diskon Rp. 500 berlaku mulai pembelian 10 pcs.

E13009L MJE13009L E13009 13009L KSE13009L TO-3P NPN High Power Transistor

High Voltage Switch Mode Applications

• High Speed Switching

• Suitable for Switching Regulator and Motor Control

NPN Silicon Transistor

Symbol Parameter Value Units
VCBO Collector-Base Voltage 700 V
V CEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 9 V
IC Collector Current (DC) 12 A
ICP Collector Current (Pulse) 24 A
IB Base Current 6 A
PC Collector Dissipation (TC=25°C) 130 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C

datasheet