RJP30H1 TO-252 N-channel IGBT High Speed Power Switching

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Rp. 6.000


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RJP30H1 TO-252 N-channel IGBT High Speed Power Switching

Features

 Trench gate and thin wafer technology (G6H-II series)

 High speed switching: tr = 80 ns typ., tf = 150 ns typ.

 Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.

 Low leak current: ICES = 1 A max.

datasheet click

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